IRFP150 |
ARTSCHIP |
TO-247AC |
IRFP150.pdf |
Fifth Generation HEXFETs from Artschip utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn |
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IRF741 |
ARTSCHIP |
TO-220AB |
IRF740.pdf |
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. |
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STH75N06 |
ARTSCHIP |
TO-218 |
STH75N06.pdf |
N-Channel 60-V (D-S) 175℃ MOSFET |
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IRFP450 |
ARTSCHIP |
TO-247 |
IRFP450.pdf |
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY TM process. This technology matches and improves the performances compared with standard parts from various sources.
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IRFP350 |
ARTSCHIP |
TO-247 |
IRFP350.pdf |
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are |
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IRFP250 |
ARTSCHIP |
TO-247AC |
IRFP250.pdf |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide in the avalanche and co |
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