| BC309B |
ARTSCHIP |
TO-92 |
 BC307A.pdf |
PNP Epitaxial Silicon Transistor
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| BC307A |
ARTSCHIP |
TO-92 |
BC307A.pdf |
PNP Epitaxial Silicon Transistor
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| BC549 |
ARTSCHIP |
TO-92 |
BC549B.pdf |
This device is designed for use as general purpose amplifier and switches requiring collector currents to 300Ma. Sourced from Process 10. See PN100A for characteristics.
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| BC548 |
ARTSCHIP |
TO-92 |
BC548B.pdf |
This device is designed for use as general purpose amplifier and switches requiring collector currents to 300Ma. Sourced from Process 10. See PN100A for characteristics.
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|
| IRFZ10 |
ARTSCHIP |
TO-220AB |
IRFZ10.pdf |
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial- |
|
| IRFZ14 |
ARTSCHIP |
TO-220AB |
IRFZ14.pdf |
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial- |
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| IRFZ15 |
ARTSCHIP |
TO-220AB |
|
Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device t |
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| MJE13009 |
ARTSCHIP |
- |
MJE13009.pdf |
The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoi |
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