MC74HC164AN |
ARTSCHIP |
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mc74hc164.pdf |
These 8-bit shift registers feature AND-gated serial inputs and an asynchronous clear (CLR)\ input. The gated serial (A and B) inputs permit complete control over incoming data; a low at either input inhibits entry of the new data and resets the first fl |
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MC74HC164 |
ARTSCHIP |
SOP |
mc74hc164.pdf |
These 8-bit shift registers feature AND-gated serial inputs and an asynchronous clear (CLR)\ input. The gated serial (A and B) inputs permit complete control over incoming data; a low at either input inhibits entry of the new data and resets the first fl |
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IRFZ48 |
ARTSCHIP |
TO-220AB |
IRFZ48S_L.pdf |
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device for use in a wide variety of |
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MJE13007 |
ARTSCHIP |
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MJE13007.pdf |
The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, So |
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DS1245Y-70 |
ARTSCHIP |
DIP-32 |
DS1245W.pdf |
The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol |
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MJE13003 |
ARTSCHIP |
- |
MJE13003.PDF |
These devices are designed for high-voltage,high-speed power switching inductive circuits where fall time is critical.They are particularly suited for 115and 220V SWITCHMODE. |
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MJE13001 |
ARTSCHIP |
- |
MJE13001.pdf |
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current I |
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BC858A |
ARTSCHIP |
SOT-23 |
BC857.pdf |
BC857A is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 68.
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