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Product classification Discrete devices_N-MOS Discrete devices_NPN Discrete devices_P-MOS Discrete devices_PNP Discrete devices_SCR Discrete devices_switching diode Discrete devices_IGBT Logical device_RTC_SRAM Logic devices _ General micro-contr.. Logic devices _ timer Logic devices _ the serial EEPROM Logic devices _ serial converters Logical device_SRAM Logical device_RTC_NVSRAM Logical device_NVSRAM Logical device_SRAM2NVSRAM Power management controller LED power management driver Power management _ voltage referenc.. Power management _ voltage monitors Power management _ fan controller Power management _ earth leakage pr.. Power management _ linear regulator.. Power management _ converter Power management _ relay driver Power management _ the power factor.. Signal management _ codec Signal management _ the operational.. Audio signal management switch Signal management _ audio amplifier Signal management _ Compander Signal management _ line receiver/d.. Photoelectric sensor/signal managem.. Signal management _ differential li.. Signal management _ comparator Signal management _SIM card interfa.. Signal management _RS232/422/458 Signal management _I_O Extender Signal management _I_O Extender Magnetic resistance sensor switch Phone chips The radio chip Automotive Electronics     Current location: Home > Product Center  >  Discrete Model Brand Package Product specifications Profile 6N60 ARTSCHIP TO-220AB 6N60.pdf The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swit 4N60 ARTSCHIP TO-220AB 4N60.pdf The 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swit 2SK2498 ARTSCHIP TO-220 2SK2498.pdf 2SK2498 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 2N60 ARTSCHIP 2N60.pdf The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high spee IRF621 ARTSCHIP TO-220AB IRF620_623.pdf These device are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. IRFZ45 ARTSCHIP TO-220 IRFZ44_45_40_42.pdf N-CHANNEL POWER MOSFETS IRLZ44 ARTSCHIP TO-220 IRLZ44.pdf Small signal MOSFET 60V, 115mA, N-Channel SOT-23 IRLZ34 ARTSCHIP TO-220 IRLZ34.pdf Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial- first page page up  page down  last page  Quick jump to： 1 2 3 4 5 6 7 8

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