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Product classification Discrete devices_N-MOS Discrete devices_NPN Discrete devices_P-MOS Discrete devices_PNP Discrete devices_SCR Discrete devices_switching diode Discrete devices_IGBT Logical device_RTC_SRAM Logic devices _ General micro-contr.. Logic devices _ timer Logic devices _ the serial EEPROM Logic devices _ serial converters Logical device_SRAM Logical device_RTC_NVSRAM Logical device_NVSRAM Logical device_SRAM2NVSRAM Power management controller LED power management driver Power management _ voltage referenc.. Power management _ voltage monitors Power management _ fan controller Power management _ earth leakage pr.. Power management _ linear regulator.. Power management _ converter Power management _ relay driver Power management _ the power factor.. Signal management _ codec Signal management _ the operational.. Audio signal management switch Signal management _ audio amplifier Signal management _ Compander Signal management _ line receiver/d.. Photoelectric sensor/signal managem.. Signal management _ differential li.. Signal management _ comparator Signal management _SIM card interfa.. Signal management _RS232/422/458 Signal management _I_O Extender Signal management _I_O Extender Magnetic resistance sensor switch Phone chips The radio chip Automotive Electronics     Current location: Home > Product Center  >  Logical Model Brand Package Product specifications Profile DS1249Y-70 ARTSCHIP DIP-32 DS1249AB-DS1249Y.pdf The DS1249 2048k Nonvolatile (NV) SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as 262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol DS1250W ARTSCHIP DIP-32 DS1250W.pdf The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance c DS1250W-100 ARTSCHIP DIP-32 DS1250W.pdf The DS1250W 3.3V 4096k NV SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance c DS1270 ARTSCHIP DIP-36 DS1270AB-DS1270Y.pdf The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleranc DS1270Y-100 ARTSCHIP DIP-36 DS1270AB-DS1270Y.pdf The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleranc DS1220Y ARTSCHIP DIP-24 DS1220Y.pdf The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance conditi DS1220Y-150 DALLAS DIP-24 DS1220Y.pdf The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance conditi DS1220Y-20 DALLAS DIP-24 DS1220Y.pdf The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance conditi first page page up  page down  last page  Quick jump to： 1 2 3 4

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