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Product classification Discrete devices_N-MOS Discrete devices_NPN Discrete devices_P-MOS Discrete devices_PNP Discrete devices_SCR Discrete devices_switching diode Discrete devices_IGBT Logical device_RTC_SRAM Logic devices _ General micro-contr.. Logic devices _ timer Logic devices _ the serial EEPROM Logic devices _ serial converters Logical device_SRAM Logical device_RTC_NVSRAM Logical device_NVSRAM Logical device_SRAM2NVSRAM Power management controller LED power management driver Power management _ voltage referenc.. Power management _ voltage monitors Power management _ fan controller Power management _ earth leakage pr.. Power management _ linear regulator.. Power management _ converter Power management _ relay driver Power management _ the power factor.. Signal management _ codec Signal management _ the operational.. Audio signal management switch Signal management _ audio amplifier Signal management _ Compander Signal management _ line receiver/d.. Photoelectric sensor/signal managem.. Signal management _ differential li.. Signal management _ comparator Signal management _SIM card interfa.. Signal management _RS232/422/458 Signal management _I_O Extender Signal management _I_O Extender Magnetic resistance sensor switch Phone chips The radio chip Automotive Electronics     Current location: Home > Product Center  Model Brand Package Product specifications Profile DS1230Y-120 ARTSCHIP DIP-28 DS1230W.pdf The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleran DS1230Y-150 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1230Y-200 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1230Y-70 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1245W-150 ARTSCHIP DIP-32 DS1245W.pdf The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol DS1245W-70 ARTSCHIP DIP-32 DS1245W.pdf The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol DS1245Y-100 ARTSCHIP DIP-32 DS1245W.pdf The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol BC547A ARTSCHIP TO-92 BC547A.pdf This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from Process 10. See PN 100A for characteristics. first page page up  page down  last page  Quick jump to： 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57

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