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Product classification Discrete devices_N-MOS Discrete devices_NPN Discrete devices_P-MOS Discrete devices_PNP Discrete devices_SCR Discrete devices_switching diode Discrete devices_IGBT Logical device_RTC_SRAM Logic devices _ General micro-contr.. Logic devices _ timer Logic devices _ the serial EEPROM Logic devices _ serial converters Logical device_SRAM Logical device_RTC_NVSRAM Logical device_NVSRAM Logical device_SRAM2NVSRAM Power management controller LED power management driver Power management _ voltage referenc.. Power management _ voltage monitors Power management _ fan controller Power management _ earth leakage pr.. Power management _ linear regulator.. Power management _ converter Power management _ relay driver Power management _ the power factor.. Signal management _ codec Signal management _ the operational.. Audio signal management switch Signal management _ audio amplifier Signal management _ Compander Signal management _ line receiver/d.. Photoelectric sensor/signal managem.. Signal management _ differential li.. Signal management _ comparator Signal management _SIM card interfa.. Signal management _RS232/422/458 Signal management _I_O Extender Signal management _I_O Extender Magnetic resistance sensor switch Phone chips The radio chip Automotive Electronics     Current location: Home > Product Center  Model Brand Package Product specifications Profile 2N2222 ARTSCHIP TO-92 2N2220_2N2222.pdf 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. BC238B ARTSCHIP BC238B.pdf NPN Epitaxial Silicon Transistor IRFZ34 ARTSCHIP TO-220AB IRFZ34N.pdf Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial- BC547B ARTSCHIP TO-92 BC547A.pdf This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from Process 10. See PN 100A for characteristics. IRFZ24 ARTSCHIP TO-220AB IRFZ24N.pdf Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device that DS1225Y-200 ARTSCHIP DIP-28 DS1225Y.pdf The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance conditi DS1230W-100 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1230Y-100 ARTSCHIP DIP-28 DS1230W.pdf The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleran first page page up  page down  last page  Quick jump to： 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57

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