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Product classification Discrete devices_N-MOS Discrete devices_NPN Discrete devices_P-MOS Discrete devices_PNP Discrete devices_SCR Discrete devices_switching diode Discrete devices_IGBT Logical device_RTC_SRAM Logic devices _ General micro-contr.. Logic devices _ timer Logic devices _ the serial EEPROM Logic devices _ serial converters Logical device_SRAM Logical device_RTC_NVSRAM Logical device_NVSRAM Logical device_SRAM2NVSRAM Power management controller LED power management driver Power management _ voltage referenc.. Power management _ voltage monitors Power management _ fan controller Power management _ earth leakage pr.. Power management _ linear regulator.. Power management _ converter Power management _ relay driver Power management _ the power factor.. Signal management _ codec Signal management _ the operational.. Audio signal management switch Signal management _ audio amplifier Signal management _ Compander Signal management _ line receiver/d.. Photoelectric sensor/signal managem.. Signal management _ differential li.. Signal management _ comparator Signal management _SIM card interfa.. Signal management _RS232/422/458 Signal management _I_O Extender Signal management _I_O Extender Magnetic resistance sensor switch Phone chips The radio chip Automotive Electronics     Current location: Home > Product Center  >  Logical device_NVSRAM Model Brand Package Product specifications Profile DS1245Y-70 ARTSCHIP DIP-32 DS1245W.pdf The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tol DS1225Y-200 ARTSCHIP DIP-28 DS1225Y.pdf The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance conditi DS1230W-100 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1230Y-100 ARTSCHIP DIP-28 DS1230W.pdf The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleran DS1230Y-120 ARTSCHIP DIP-28 DS1230W.pdf The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-toleran DS1230Y-150 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1230Y-200 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi DS1230Y-70 ARTSCHIP DIP-28 DS1230W.pdf The DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condi first pagepage up page down  last page  Quick jump to： 1 2 3 4

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